Infineon IAUA200N04S5N010: A High-Performance 200A OptiMOS 5 Power MOSFET

In the realm of power electronics, achieving high efficiency and robust performance in a compact form factor is a constant challenge. The Infineon IAUA200N04S5N010 stands out as a premier solution, engineered to meet the demanding requirements of modern high-current applications. This Power MOSFET, part of Infineon's advanced OptiMOS™ 5 40V family, sets a new benchmark with its exceptional 200A continuous current rating and ultra-low RDS(on) of just 0.98mΩ.

The core of its superior performance lies in Infineon's innovative trench technology. This latest generation of silicon technology enables a significant reduction in on-state resistance and switching losses, which is paramount for enhancing overall system efficiency. For designers, this translates into the ability to handle higher power densities without compromising thermal management or requiring excessively large cooling systems. This is particularly crucial in applications like server and telecom power supplies, industrial motor drives, and high-performance DC-DC converters, where every watt saved contributes to lower operational costs and improved reliability.

Furthermore, the IAUA200N04S5N010 is housed in a SuperSO8 package, which offers an excellent balance between size and performance. This packaging innovation allows the MOSFET to deliver impressive power handling capabilities from a very small footprint, making it an ideal choice for space-constrained designs. The high power density achieved is a key enabler for next-generation power systems that demand more functionality from a smaller area.

Another critical advantage is the device's enhanced switching characteristics. The optimized gate charge (Qg) ensures fast and efficient switching, which is essential for high-frequency operation. This leads to reduced electromagnetic interference (EMI) and allows for the use of smaller passive components, further shrinking the overall system size and bill of materials (BOM) cost.

In summary, the Infineon IAUA200N04S5N010 is not just a component but a strategic asset for power design engineers. It embodies a perfect synergy of high current capability, minimal losses, and superior thermal performance, pushing the boundaries of what is possible in power conversion and management.

ICGOODFIND: The Infineon IAUA200N04S5N010 OptiMOS 5 MOSFET is a top-tier component that delivers unmatched efficiency and power density for high-current applications, making it a go-to choice for cutting-edge power design.

Keywords: OptiMOS 5, Power MOSFET, Low RDS(on), High Current, Power Density