Infineon IRFS7437TRLPBF: High-Performance 60V Dual N-Channel MOSFET in a PQFN 3x3mm Package

In the relentless pursuit of higher power density and efficiency in modern electronics, the packaging and integration of power semiconductors have become as critical as silicon performance itself. The Infineon IRFS7437TRLPBF stands as a prime example of this evolution, offering engineers a compact, high-performance solution for demanding power management applications.

This device integrates two independent N-channel MOSFETs in an advanced PQFN 3x3mm (Power Quad Flat No-Leads) package. Each MOSFET is rated for a drain-source voltage (VDS) of 60V, making it exceptionally suited for a wide range of intermediate voltage applications, including DC-DC conversion in computing and telecom systems, motor control, and load switching.

The hallmark of the IRFS7437TRLPBF is its exceptional low on-state resistance (RDS(on)). With a typical RDS(on) of just 2.0 mΩ at 10 V (VGS), it minimizes conduction losses, leading to significantly improved efficiency and reduced heat generation. This allows designers to either push more current through a smaller footprint or achieve higher reliability and thermal performance at existing current levels. The dual-die configuration is particularly advantageous for building synchronous buck converter topologies, where both a high-side and low-side switch are required, simplifying board layout and saving valuable space.

The compact 3x3mm PQFN package is a key enabler for miniaturization. Its minimal parasitic inductance and excellent thermal performance, aided by a large exposed thermal pad, ensure that the high-speed switching capabilities of the MOSFETs are fully utilized without compromising thermal stability. This makes the part ideal for high-frequency switching power supplies where efficiency and size are paramount.

ICGOOODFIND: The Infineon IRFS7437TRLPBF successfully merges high voltage capability, remarkably low resistance, and space-saving integration. It is a superior choice for designers aiming to enhance power density, efficiency, and thermal management in next-generation power electronics, from advanced computing to automotive systems.

Keywords: Power MOSFET, PQFN 3x3mm, Low RDS(on), Synchronous Buck Converter, Power Density