Infineon BSC032N04LS 30V N-Channel OptiMOS Power MOSFET Datasheet and Application Review

The Infineon BSC032N04LS is a 30V N-Channel MOSFET from Infineon’s fifth-generation OptiMOS™ power semiconductor family. Designed for high efficiency and power density in demanding applications, this MOSFET combines extremely low on-state resistance (RDS(on)) with superior switching performance, making it an ideal choice for modern power conversion systems.

A key highlight of the BSC032N04LS is its remarkably low RDS(on) of just 3.2 mΩ (max at VGS = 10V), which significantly reduces conduction losses. This allows the device to handle high continuous drain currents (ID) up to 40 A, making it suitable for high-current applications. The low gate charge (QG) and optimized figure of merit (FOM) ensure minimal switching losses, enabling operation at higher frequencies with improved thermal performance.

The device is housed in an Infineon SuperSO8 package, which offers an excellent power-to-size ratio. This compact footprint is critical for space-constrained designs such as DC-DC converters, motor drives, and synchronous rectification in switch-mode power supplies (SMPS). The package also features low parasitic inductance, further enhancing switching efficiency.

In terms of protection and robustness, the BSC032N04LS is characterized by its avalanche ruggedness and 100% repetitive avalanche tested capability. This ensures high reliability under voltage transients and harsh operating environments. Additionally, the MOSFET is qualified according to the highest automotive standards, making it suitable for automotive power systems including electric pumps, engine management, and LED lighting.

From an application perspective, this MOSFET excels in synchronous rectification stages of server and telecom power supplies, where efficiency and thermal management are critical. Its fast body diode reverse recovery reduces reverse conduction losses, further improving overall system efficiency in buck and half-bridge converters.

ICGOOODFIND: The Infineon BSC032N04LS stands out as a high-performance, highly efficient power MOSFET optimized for low-voltage, high-current applications. Its combination of ultra-low RDS(on), excellent switching characteristics, and robust packaging makes it a top choice for designers aiming to maximize power density and reliability.

Keywords:

OptiMOS, Low RDS(on), Synchronous Rectification, SuperSO8, High Efficiency